 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MMZ09312Bt1 1 rf device data freescale semiconductor, inc. heterojunction bipolar transistor technology (ingap hbt) high efficiency/linearity amplifier the MMZ09312B is a 2--stage high efficiency, class ab ingap hbt amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. it is suitable for applications with frequencies from 400 to 1000 mhz such as cdma, gsm, lte and zigbee r at operating voltages from 3 to 5 volts. the amplifier is housed in a cost--effective, surface mount qfn plastic package. ? typical performance: v cc1 =v cc2 =v bias =5volts,i cq =74ma frequency p out (dbm) g ps (db) acpr (dbc) pae (%) test signal 900 mhz 24 31.5 --50.0 26.0 is--95 cdma 750 mhz 17.5 32.0 --50.0 15.3 lte 10/20 mhz 450 mhz 29 33.0 --40.0 57.0 zigbee features ? frequency: 400--1000 mhz ? p1db: 29.6 dbm @ 900 mhz ? power gain: 31.7 db @ 900 mhz ? oip3: 42 dbm @ 900 mhz ? active bias control (adjustable externally) ? single 3 to 5 volt supply ? performs well with digital predistortion systems ? single--ended power detector ? cost--effective qfn surface mount package ? in tape and reel. t1 suffix = 1,000 units, 12 mm tape width, 7 inch reel. table 1. typical performance (1) characteristic symbol 450 mhz 900 mhz unit small--signal gain (s21) g p 33.8 31.7 db input return loss (s11) irl -- 2 2 -- 1 5 db output return loss (s22) orl -- 2 5 -- 1 8 db power output @ 1db compression p1db 28.8 29.6 dbm 1. v cc1 =v cc2 =v bias =5vdc,t a =25 c, 50 ohm system, cw application circuit table 2. maximum ratings rating symbol value unit supply voltage v cc 6 v supply current i cc 550 ma rf input power p in 14 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 84 c, v cc1 =v cc2 =v bias =5vdc r jc 56 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: MMZ09312B rev. 1, 2/2012 400--1000 mhz, 31.7 db 29.6 dbm ingap hbt MMZ09312Bt1 case 2131--01 qfn 3x3 plastic ? freescale semiconductor, inc., 2011--2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MMZ09312Bt1 table 4. electrical characteristics (v cc1 =v cc2 =v bias = 5 vdc, 900 mhz, t a =25 c, 50 ohm system, in freescale cw application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 29 31.7 ? db input return loss (s11) irl ? -- 1 5 ? db output return loss (s22) orl ? -- 1 8 ? db power output @ 1db compression p1db ? 29.6 ? dbm third order output intercept point, two--tone cw oip3 ? 42 ? dbm noise figure nf ? 4 ? db supply current (1) i cq 69 74 83 ma supply voltage (1) v cc ? 5 ? v table 5. esd protection characteristics test methodology class human body model (per jesd22--a114) meets 2000 v for all pins except: pin 11 meets 400 v pin 8 meets 200 v class 0 rating machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 6. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 c 1. for reliable operation, the juncti on temperature should not exceed 150 c. figure 1. functional block diagram figure 2. pin connections v ba2 v cc2 rf in 19 28 37 12 11 10 456 rf out v cc1 gnd v ba1 v bias rf out gnd gnd p det v ba2 v cc2 rf in rf out v cc1 gnd v ba1 v bias rf out bias circuit bias circuit gnd p det gnd MMZ09312Bt1 3 rf device data freescale semiconductor, inc. figure 3. MMZ09312B test circuit schematic ? 900 mhz, 5 volt operation c5 rf input r1 l1 c10 l2 45 6 3 2 1 12 11 10 7 8 9 c4 rf output bias circuit v cc2 p det l5 c11 l3 c3 l4 v cc1 c2 v bias c1 r2 table 7. MMZ09312B test circuit component designa tions and values ? 900 mhz, 5 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3 4.7 f chip capacitor grm188r60j475ke19 murata c4 470 pf chip capacitor grm1555c1h471ja01 murata c5 100 pf chip capacitor grm1555c1h101ja01 murata c6, c7, c8, c9 components not placed c10 4.7 pf chip capacitor 04023j4r7bbstr avx c11 6.8 pf chip capacitor 04023j6r8bbstr avx l1 8.2 nh chip inductor ll1608--fsl8n2jl toko l2 1.2 nh chip inductor ll1608--fsl1n2s toko l3 33 nh chip inductor 0402cs--33nxglw coilcraft l4 22 nh chip inductor 0402cs--22nxglw coilcraft l5 3.3 nh chip inductor 0603cs--3n3xjlw coilcraft r1 330 ? , 1/16 w chip resistor rc0402jr--07331rl yageo r2 1.5 k ? , 1/16 w chip resistor rc0402jr--07152rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola note: component numbers c6, c7, c8, c9 and r3 are labeled on board but not placed. 4 rf device data freescale semiconductor, inc. MMZ09312Bt1 figure 4. MMZ09312B test circuit component layout ? 900 mhz, 5 volt operation (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c6*, c7*, c8*, c9* and r3* are labeled on board but not placed. qfn 3x3--12m rev. 1 l1 rf in rf out l2 c5 c4 r1 r2 c1 v bias (1) v cc1 v cc2 c2 l4 l3 c10 l5 c11 c3 p det r3* c8* c9* c6* c7* table 7. MMZ09312B test circuit component designa tions and values ? 900 mhz, 5 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3 4.7 f chip capacitor grm188r60j475ke19 murata c4 470 pf chip capacitor grm1555c1h471ja01 murata c5 100 pf chip capacitor grm1555c1h101ja01 murata c6, c7, c8, c9 components not placed c10 4.7 pf chip capacitor 04023j4r7bbstr avx c11 6.8 pf chip capacitor 04023j6r8bbstr avx l1 8.2 nh chip inductor ll1608--fsl8n2jl toko l2 1.2 nh chip inductor ll1608--fsl1n2s toko l3 33 nh chip inductor 0402cs--33nxglw coilcraft l4 22 nh chip inductor 0402cs--22nxglw coilcraft l5 3.3 nh chip inductor 0603cs--3n3xjlw coilcraft r1 330 ? , 1/16 w chip resistor rc0402jr--07331rl yageo r2 1.5 k ? , 1/16 w chip resistor rc0402jr--07152rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola (test circuit component designations and values table repeated for reference.) MMZ09312Bt1 5 rf device data freescale semiconductor, inc. typical characteristics ? 900 mhz, 5 volt operation figure 5. s11 versus frequency versus temperature 1000 -- 2 0 -- 6 700 f, frequency (mhz) 760 -- 8 -- 1 0 -- 1 2 -- 1 4 -- 1 6 -- 1 8 s11 (db) -- 4 0 c 820 880 940 25 c 85 c figure 6. s21 versus frequency versus temperature 1000 5 40 700 f, frequency (mhz) 760 35 30 25 15 10 s21 (db) -- 4 0 c 820 880 940 25 c 85 c figure 7. s22 versus frequency versus temperature 1000 -- 3 5 0 700 f, frequency (mhz) 760 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 s22 (db) -- 4 0 c 820 880 940 25 c 85 c v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc 20 6 rf device data freescale semiconductor, inc. MMZ09312Bt1 typical characteristics ? 900 mhz, 5 volt operation 270 60 90 figure 8. acpr versus collector current versus output power versus temperature p out , output power (dbm) -- 3 0 -- 3 3 -- 3 6 -- 5 4 21 -- 4 5 i cc , collector current (ma) acpr (dbc) -- 3 9 -- 5 1 11 13 120 150 180 210 240 -- 4 8 -- 5 7 27 300 30 0 -- 4 2 15 17 19 25 23 -- 4 0 c 25 c 85 c -- 4 0 c 25 c 85 c acpr 45 10 15 figure 9. power gain versus power added efficiency versus output power versus temperature p out , output power (dbm) 34 32 30 18 21 24 pae, power added efficiency (%) g ps , power gain (db) 28 20 11 13 20 25 30 35 40 22 16 27 50 5 0 26 15 17 19 25 23 -- 4 0 c 25 c 85 c -- 4 0 c 25 c 85 c 36 gain pae figure 10. p1db versus frequency versus temperature, cw f, frequency (mhz) 30 28 26 20 24 700 18 22 760 -- 4 0 c 25 c 85 c 32 820 880 1000 940 p1db, 1 db compression point, cw (dbm) i cc v cc1 =v cc2 =v bias =5vdc -- 6 0 v cc1 =v cc2 =v bias =5vdc,f=900mhz single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth v cc1 =v cc2 =v bias =5vdc,f=900mhz single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth figure 11. power detector versus output power versus temperature p out , output power (dbm) 1.8 1.6 1.4 0.2 21 0.8 p det , power detector (v) 1.2 0.4 11 13 0.6 0 27 1 15 17 19 25 23 25 c 85 c -- 4 0 c 2 v cc1 =v cc2 =v bias =5vdc,f=900mhz single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth MMZ09312Bt1 7 rf device data freescale semiconductor, inc. figure 12. MMZ09312B test circuit schematic ? 900 mhz, 3.3 volt operation c5 rf input r1 l1 c10 l2 45 6 3 2 1 12 11 10 7 8 9 c4 rf output bias circuit v cc2 p det l5 c11 l3 c3 l4 v cc1 c2 v bias c1 r2 table 8. MMZ09312B test circuit component designa tions and values ? 900 mhz, 3.3 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3 4.7 f chip capacitor grm188r60j475ke19 murata c4 470 pf chip capacitor grm1555c1h471ja01 murata c5 100 pf chip capacitor grm1555c1h101ja01 murata c6, c7, c8, c9 components not placed c10 4.7 pf chip capacitor 04023j4r7bbstr avx c11 6.8 pf chip capacitor 04023j6r8bbstr avx l1 8.2 nh chip inductor ll1608--fsl8n2jl toko l2 1.2 nh chip inductor ll1608--fsl1n2s toko l3 33 nh chip inductor 0402cs--33nxglw coilcraft l4 22 nh chip inductor 0402cs--22nxglw coilcraft l5 3.3 nh chip inductor 0603cs--3n3xjlw coilcraft r1 82 ? , 1/16 w chip resistor rc0402jr--07820rl yageo r2 470 ? , 1/16 w chip resistor rc0402jr--07471rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola note: component numbers c6, c7, c8, c9 and r3 are labeled on board but not placed. 8 rf device data freescale semiconductor, inc. MMZ09312Bt1 figure 13. MMZ09312B test circuit component layout ? 900 mhz, 3.3 volt operation (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c6*, c7*, c8*, c9* and r3* are labeled on board but not placed. qfn 3x3--12m rev. 1 l1 rf in rf out l2 c5 c4 r1 r2 c1 v bias (1) v cc1 v cc2 c2 l4 l3 c10 l5 c11 c3 p det r3* c8* c9* c6* c7* table 8. MMZ09312B test circuit component designa tions and values ? 900 mhz, 3.3 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3 4.7 f chip capacitor grm188r60j475ke19 murata c4 470 pf chip capacitor grm1555c1h471ja01 murata c5 100 pf chip capacitor grm1555c1h101ja01 murata c6, c7, c8, c9 components not placed c10 4.7 pf chip capacitor 04023j4r7bbstr avx c11 6.8 pf chip capacitor 04023j6r8bbstr avx l1 8.2 nh chip inductor ll1608--fsl8n2jl toko l2 1.2 nh chip inductor ll1608--fsl1n2s toko l3 33 nh chip inductor 0402cs--33nxglw coilcraft l4 22 nh chip inductor 0402cs--22nxglw coilcraft l5 3.3 nh chip inductor 0603cs--3n3xjlw coilcraft r1 82 ? , 1/16 w chip resistor rc0402jr--07820rl yageo r2 470 ? , 1/16 w chip resistor rc0402jr--07471rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola (test circuit component designations and values table repeated for reference.) MMZ09312Bt1 9 rf device data freescale semiconductor, inc. typical characteristics ? 900 mhz, 3.3 volt operation figure 14. s11 versus frequency versus temperature 1000 -- 2 8 0 700 f, frequency (mhz) 760 -- 4 -- 8 -- 1 2 -- 1 6 -- 2 0 -- 2 4 s11 (db) -- 4 0 c 820 880 940 25 c 85 c figure 15. s21 versus frequency versus temperature 1000 10 38 700 f, frequency (mhz) 760 34 30 26 18 14 s21 (db) -- 4 0 c 820 880 940 25 c 85 c figure 16. s22 versus frequency versus temperature 1000 -- 2 8 0 700 f, frequency (mhz) 760 -- 4 -- 8 -- 1 2 -- 1 6 -- 2 0 -- 2 4 s22 (db) -- 4 0 c 820 880 940 25 c 85 c v cc1 =v cc2 =v bias =3.3vdc 22 v cc1 =v cc2 =v bias =3.3vdc v cc1 =v cc2 =v bias =3.3vdc 10 rf device data freescale semiconductor, inc. MMZ09312Bt1 typical characteristics ? 900 mhz, 3.3 volt operation 360 80 120 figure 17. acpr versus collector current versus output power versus temperature p out , output power (dbm) 0 -- 6 -- 1 2 -- 4 8 20 -- 3 0 i cc , collector current (ma) acpr (dbc) -- 1 8 -- 4 2 10 12 160 200 240 280 320 -- 3 6 -- 5 4 26 400 40 0 -- 2 4 14 16 18 24 22 -- 4 0 c 25 c 85 c -- 4 0 c 25 c 85 c acpr 45 10 15 figure 18. power gain versus power added efficiency versus output power versus temperature p out , output power (dbm) 32 30 28 16 20 22 pae, power added efficiency (%) g ps , power gain (db) 26 18 10 12 20 25 30 35 40 20 14 26 50 5 0 24 14 16 18 24 22 -- 4 0 c 25 c 85 c -- 4 0 c 25 c 85 c 34 gain pae figure 19. p1db versus frequency versus temperature, cw f, frequency (mhz) 28 26 24 18 22 700 16 20 760 -- 4 0 c 25 c 85 c 30 820 880 1000 940 p1db, 1 db compression point, cw (dbm) i cc v cc1 =v cc2 =v bias =3.3vdc -- 6 0 v cc1 =v cc2 =v bias =3.3vdc,f=900mhz single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth figure 20. power detector versus output power versus temperature p out , output power (dbm) 2.7 2.4 2.1 0.3 20 1.2 p det , power detector (v) 1.8 0.6 10 12 0.9 0 26 1.5 14 16 18 24 22 25 c 85 c -- 4 0 c 3 v cc1 =v cc2 =v bias =3.3vdc,f=900mhz single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth v cc1 =v cc2 =v bias =3.3vdc,f=900mhz single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth MMZ09312Bt1 11 rf device data freescale semiconductor, inc. figure 21. MMZ09312B test circuit schematic ? 450 mhz, 5 volt operation c5 rf input r1 l1 c10 l2 45 6 3 2 1 12 11 10 7 8 9 c4 rf output bias circuit v cc2 p det l5 c11 l3 c3 l4 v cc1 c2 v bias c1 r2 table 9. MMZ09312B test circuit component designa tions and values ? 450 mhz, 5 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3 4.7 f chip capacitor grm188r60j475ke19 murata c4 470 pf chip capacitor grm1555c1h471ja01 murata c5 100 pf chip capacitor grm1555c1h101ja01 murata c6, c7, c8, c9 components not placed c10 3.9 pf chip capacitor 04023j3r9bbstr avx c11 10 pf chip capacitor 04023j10r0bbstr avx l1 18 nh chip inductor ll1608--fsl18n0s toko l2 1.2 nh chip inductor ll1608--fsl1n2s toko l3 3.9 nh chip inductor ll1608--fsl3n9s toko l4 12 nh chip inductor ll1608--fsl12n0s toko l5 12 nh chip inductor 0603cs--12nxjl coilcraft r1 330 ? , 1/16 w chip resistor rc0402jr--07331rl yageo r2 1.5 k ? , 1/16 w chip resistor rc0402jr--07152rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola note: component numbers c6, c7, c8, c9 and r3 are labeled on board but not placed. 12 rf device data freescale semiconductor, inc. MMZ09312Bt1 figure 22. MMZ09312B test circuit component layout ? 450 mhz, 5 volt operation (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c6*, c7*, c8*, c9* and r3* are labeled on board but not placed. qfn 3x3--12m rev. 1 l1 rf in rf out l2 c5 c4 r1 r2 c1 v bias (1) v cc1 v cc2 c2 l4 l3 c10 l5 c11 c3 p det r3* c8* c9* c6* c7* table 9. MMZ09312B test circuit component designa tions and values ? 450 mhz, 5 volt operation part description part number manufacturer c1, c2 1 f chip capacitors grm155r61a105ke15 murata c3 4.7 f chip capacitor grm188r60j475ke19 murata c4 470 pf chip capacitor grm1555c1h471ja01 murata c5 100 pf chip capacitor grm1555c1h101ja01 murata c6, c7, c8, c9 components not placed c10 3.9 pf chip capacitor 04023j3r9bbstr avx c11 10 pf chip capacitor 04023j10r0bbstr avx l1 18 nh chip inductor ll1608--fsl18n0s toko l2 1.2 nh chip inductor ll1608--fsl1n2s toko l3 3.9 nh chip inductor ll1608--fsl3n9s toko l4 12 nh chip inductor ll1608--fsl12n0s toko l5 12 nh chip inductor 0603cs--12nxjl coilcraft r1 330 ? , 1/16 w chip resistor rc0402jr--07331rl yageo r2 1.5 k ? , 1/16 w chip resistor rc0402jr--07152rl yageo r3 component not placed pcb 0.014 , r =3.7 fr408 isola (test circuit component designations and values table repeated for reference.) MMZ09312Bt1 13 rf device data freescale semiconductor, inc. typical characteristics ? 450 mhz, 5 volt operation figure 23. s11 versus frequency 700 -- 4 0 -- 5 400 f, frequency (mhz) 460 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 -- 3 5 s11 (db) 520 580 640 figure 24. s21 versus frequency 700 5 40 400 f, frequency (mhz) 460 35 30 25 15 10 s21 (db) 520 580 640 figure 25. s22 versus frequency 700 -- 3 5 0 400 f, frequency (mhz) 460 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 s22 (db) 520 580 640 20 v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc 14 rf device data freescale semiconductor, inc. MMZ09312Bt1 typical characteristics ? 450 mhz, 5 volt operation 23 15 17 29 19 21 27 25 45 10 15 figure 26. power gain versus power added efficiency versus output power, cw p out , output power (dbm) 36 34 32 20 23 26 pae, power added efficiency (%) g ps , power gain (db) 30 22 15 17 20 25 30 35 40 24 18 29 50 5 0 28 19 21 27 25 38 gain pae figure 27. p1db versus frequency, cw f, frequency (mhz) 30 28 26 20 24 400 18 22 440 32 480 520 640 600 p1db, 1 db compression point, cw (dbm) v cc1 =v cc2 =v bias =5vdc figure 28. power detector versus output power, cw p out , output power (dbm) 3.6 3.2 2.8 0.4 1.6 p det , power detector (v) 2.4 0.8 1.2 0 2 4 v cc1 =v cc2 =v bias =5vdc f = 450 mhz v cc1 =v cc2 =v bias =5vdc f = 450 mhz 560 MMZ09312Bt1 15 rf device data freescale semiconductor, inc. figure 29. pcb pad layout for qfn 3x3 3.00 3.40 2.00 0.50 0.30 1.6 x 1.6 solder pad with thermal via structure 0.70 figure 30. product marking ma03 ywz 16 rf device data freescale semiconductor, inc. MMZ09312Bt1 package dimensions MMZ09312Bt1 17 rf device data freescale semiconductor, inc. 18 rf device data freescale semiconductor, inc. MMZ09312Bt1 MMZ09312Bt1 19 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 nov. 2011 ? initial release of data sheet 1 feb. 2012 ? typical performance table: changed p out at 750 mhz from 19.5 to 17.5 dbm to reflect recent performance measurements, p. 1 ? figs. 3, 12 and 21, MMZ09312B test circuit schematic : corrected l1 inductor label in test circuit schematics, p. 3, 7 and 11 20 rf device data freescale semiconductor, inc. MMZ09312Bt1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011--2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MMZ09312B rev. 1, 2/2012 |
Price & Availability of MMZ09312B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |